Physics and Technology of High-k Gate Dielectrics 5

Physics and Technology of High-k Gate Dielectrics 5

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This issue covers in detail all aspects of the physics and the technology of high dielectric constant gate stacks, including high mobility substrates, high dielectric constant materials, processing, metals for gate electrodes, interfaces, physical, chemical, and electrical characterization, gate stack reliability, and DRAM and non-volatile memories.It is a viable dielectric for future nano-size metal oxide semiconductor field effect transistors and capacitors. ... Based on the band diagram alignment of ZnO/Si, the nc-ZnO embedded gate dielectric should have better electron retentionanbsp;...

Title:Physics and Technology of High-k Gate Dielectrics 5
Author: Samares Kar
Publisher:The Electrochemical Society - 2007-01-01

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